Wafer Level Surface Activated Bonding Tool for MEMS Packaging

Author:

Howlader M. M. R.,Okada H.,Kim T. H.,Itoh T.,Suga T.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

2. Characterization of silicon wafer bonding for Power MEMS applications

3. A. S. Velasco, P. Amirfeiz, S. Bengtsson, and C. Colinge, inSemiconductor Wafer Bonding Science Technology, and Applications VI, H. Baumgart, C. E. Hunt, S. Bengtsson, and T. Abe, Editors, PV 2001-27, The Electrochemical Society Proceedings Series, Pennington, NJ (2001).

4. The indent reflow sealing (IRS) technique-a method for the fabrication of sealed cavities for MEMS devices

5. Gas development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors

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