Gas development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors-Reference-Cited by-同舟云学术

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Gas development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors

Published:1996-09 Issue:3 Volume:56 Page:273-277
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Mack S.,Baumann H.,Gösele U.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Silicon micromachined sensors;Peterson,1993

2. Semiconductor wafer bonding: recent developments;Tong;Materials Chem. Phys.,1994

3. Process design of low temperature bonding;Tong,1995

4. Hydrophobic silicon wafer bonding;Tong;Appl. Phys. Lett.,1994

5. Bonding of structured wafers;Baumann,1995

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