Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference14 articles.
1. Annealing of vacancy-related defects in semi-insulating SiC
2. Clustering of vacancy defects in high-purity semi-insulating SiC
3. Compensation mechanism in high purity semi-insulating 4H-SiC
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Si Substrate Suitable for Radiation-Resistant Space Solar Cells
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1. Effect of the SiC powder microscopic morphology on properties of Si/SiC ceramics prepared by spark plasma sintering;International Journal of Applied Ceramic Technology;2024-08-25
2. Deep levels affecting the resistivity in semi-insulating 6H–SiC;Journal of Applied Physics;2010-09
3. New approach to rapid characterization of single-crystalline silicon carbide;Technical Physics Letters;2010-01
4. Effect of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC on Reverse Current–Voltage Characteristics of Schottky Barrier Diodes;Japanese Journal of Applied Physics;2009-05-20
5. Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy;Materials Science Forum;2009-03
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