Compensation mechanism in high purity semi-insulating 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2437677
Reference25 articles.
1. Vanadium-free Semi-insulating 4H-SiC Substrates
2. Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
3. High temperature Hall effect measurements of semi-insulating 4H–SiC substrates
4. Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC
5. Photosensitive electron paramagnetic resonance spectra in semi-insulating4HSiC crystals
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1. Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate;IEEE Transactions on Electron Devices;2023-04
2. Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy;Journal of Instrumentation;2021-06-01
3. Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET;Electronics;2021-03-19
4. Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC;Journal of Physics: Condensed Matter;2020-08-25
5. High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC;IEEE Transactions on Electron Devices;2019-07
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