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Clustering of vacancy defects in high-purity semi-insulating SiC

Published:2007-02-13 Issue:8 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Aavikko R.,Saarinen K.,Tuomisto F.,Magnusson B.,Son N. T.,Janzén E.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.085208/fulltext

Reference47 articles.

1. The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance

2. 240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown4HSiC

3. Silicon vacancy relatedTV2acenter in 4H-SiC

4. Defects in Semi-Insulating SiC Substrates

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1. Properties of Z1 and Z2 Deep-Level Defects in n-Type Epitaxial and High-Purity Semi-Insulating 4H-SiC;Crystals;2024-06-07

2. Nitrogen Decoration of Basal-Plane Dislocations in 4H - SiC;Physical Review Applied;2022-05-06

3. Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs;IEEE Transactions on Electron Devices;2020-10

4. Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC;Materials Science Forum;2020-07

5. Size-dependent toughness and strength in defective 3C-SiC nanowires;Journal of Applied Physics;2019-10-28

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