The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1432444
Reference11 articles.
1. Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide
2. Semi‐insulating 6H–SiC grown by physical vapor transport
3. Point defects in silicon carbide
4. Acceptor Impurities in Silicion Carbide: Electron Paramagnetic Resonance and Optically Detected Magnetic Resonance Studies
5. The Microscopic and Electronic Structure of Shallow Donors in SiC
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