Theory of the carbon vacancy in 4H -SiC: Crystal field and pseudo-Jahn-Teller effects
Author:
Funder
Fundação para a Ciência e a Tecnologia
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.174105/fulltext
Reference67 articles.
1. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
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