Compensation of p-type doping in Al-doped 4H-SiC

Abstract

One of the major challenges of 4H-silicon carbide (4H-SiC) is that the preparation of low resistivity p-type 4H-SiC single crystals lags seriously behind that of low resistivity n-type 4H-SiC single crystals, hindering the development of important 4H-SiC power devices such as n-channel insulated gate bipolar transistors. In particular, the resistivity of p-type 4H-SiC single crystals prepared through the physical vapor transport technique can only be lowered to around 100 mΩ cm. One of the key causes is the incomplete ionization of the p-type dopant Al with an ionization energy ∼0.23 eV. Another factor is the compensating effect. It cannot simply assume nitrogen (N) is the sole compensatory center, since the number of the compensating center is larger than the concentration of N doping. In this work, we systematically investigate the compensation of native defects and self-compensation in Al-doped 4H-SiC. It is found that the positively charged carbon vacancies [Formula: see text] are also the dominant compensating centers in Al-doped 4H-SiC. When the Al concentration is in the range of 1016–1019 cm−3, the concentration of holes is lower by one order of magnitude than the Al concentration because of the compensation of [Formula: see text]. As the Al concentration exceeds 1020 cm−3, the concentration of holes is only in the order of magnitude of 1019 cm−3 owing to the dominant compensation of [Formula: see text] and supplementary self-compensation of interstitial Al [Formula: see text]. We propose that the passivation of [Formula: see text] as well as quenching is effective to enhance the hole concentration of Al-doped 4H-SiC.