The effect of cavities on recrystallization growth of high-fluence He implanted-SiC-Reference-Cited by-同舟云学术

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The effect of cavities on recrystallization growth of high-fluence He implanted-SiC

Published:2021-12 Issue: Volume:509 Page:68-72
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang Tongmin,He Xiaoxun,Chen Limin,Li Jun,Liao Qing,Xu Shuai,Zheng Pengfei,Li Bingsheng

Funder

National Natural Science Foundation of China

Sichuan Province Department of Science and Technology

National Key Research and Development Program of China

Sichuan Province Science and Technology Support Program

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference40 articles.

1. Amorphization and recrystallization of covalent tetrahedral networks

2. Nucleation and growth of tungsten nanotendrils grown under divertor-like conditions

3. Silicon carbide: synthesis and processing

4. The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature;Frontiers in Materials;2023-11-10

2. Helium and strontium co-implantation into SiC at room temperature and isochronal annealing: Structural evolution of SiC and migration behaviour of strontium;Materials Chemistry and Physics;2023-01

3. Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions;Materials;2022-04-18

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