Helium and strontium co-implantation into SiC at room temperature and isochronal annealing: Structural evolution of SiC and migration behaviour of strontium-Reference-Cited by-同舟云学术

Helium and strontium co-implantation into SiC at room temperature and isochronal annealing: Structural evolution of SiC and migration behaviour of strontium

Published:2023-01 Issue: Volume:294 Page:126998
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Mokgadi Thapelo^ORCID,Abdalla Zaki^ORCID,Abdelbagi Hesham,Msimanga Mandla,Maepa Charity,Skuratov Vladimir,Hlatshwayo Thulani

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference81 articles.

1. High-voltage double-implanted power MOSFET's in 6H-SiC;Shenoy;IEEE Electron. Device Lett.,1997

2. Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing;Jia;Appl. Phys. Lett.,2018

3. A silicon carbide room-temperature single-photon source;Castelletto;Nat. Mater.,2014

4. Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices;Yi;Opt. Mater.,2020

5. Optical nonlinearities in high-confinement silicon carbide waveguides;Cardenas;Opt. Lett.,2015

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1. The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature;Frontiers in Materials;2023-11-10

2. Effect of a silicon dioxide diffusion barrier layer and its sublimation on the migration of strontium implanted into SiC;Materials Chemistry and Physics;2023-11

3. The effects of helium, strontium, and silver triple ions implanted into SiC;Heliyon;2023-10

4. Microstructure evolution of iron precipitates in (Fe, He)-irradiated 6H-SiC: A combined TEM and multiscale modeling;Journal of Nuclear Materials;2023-10

5. Effect of a Silicon Dioxide Diffusion Barrier Layer and its Sublimation on the Migration of Strontium Implanted into Sic;2023