Deep levels affecting the resistivity in semi-insulating 6H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3481095
Reference20 articles.
1. High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates
2. Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC
3. Nonuniformities of electrical resistivity in undoped 6H-SiC wafers
4. Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical–chemical vapor transport method
5. Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition
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1. Hole capture cross section of the Al acceptor level in 4H-SiC;Materials Today Communications;2022-06
2. Deep levels related to the carbon antisite–vacancy pair in 4H-SiC;Journal of Applied Physics;2021-08-14
3. Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy;Physics Letters A;2021-07
4. Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping;Journal of Physics D: Applied Physics;2021-06-16
5. Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC;Journal of Crystal Growth;2020-02
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