Author:
Xu Tingxiang,Liu Xuechao,Zhuo Shiyi,Huang Wei,Gao Pan,Xin Jun,Shi Erwei
Funder
National Key Research and Development Program of China
Shanghai Science and Technology Innovation Action Plan Program
Young Scientists Fund of the National Natural Science Foundation of China
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. SiC for microwave power transistors;Sriram;Phys. Status Solidi A – Appl. Res.,1997
2. Recent developments in Sic single-crystal electronics;Ivanov;Semicond. Sci. Technol.,1992
3. Large-band-gap Sic, Iii-V nitride, and Ii-Vi Znse-based semiconductor-device technologies;Morkoc;J. Appl. Phys.,1994
4. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014
5. Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals;Bickermann;J. Cryst. Growth,2001
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献