Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical–chemical vapor transport method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
2. Investigation of growth processes of ingots of silicon carbide single crystals
3. High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
4. Nonuniformities of electrical resistivity in undoped 6H-SiC wafers
5. Growth of bulk SiC
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Disorder induced conductivity enhancement in SHI irradiated undoped and N-doped 6H-SiC single crystals;Journal of Materials Science: Materials in Electronics;2016-07-20
2. Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy;AIP Conference Proceedings;2011
3. Deep levels affecting the resistivity in semi-insulating 6H–SiC;Journal of Applied Physics;2010-09
4. Raman spectroscopic study of the electrical properties of 6H–SiC crystals grown by hydrogen-assisted physical vapor transport method;Journal of Applied Physics;2010-05
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