Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC-Reference-Cited by-同舟云学术

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Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

Published:2006-08-15 Issue:4 Volume:100 Page:043706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mitchel W. C.,Mitchell W. D.,Fang Z. Q.,Look D. C.,Smith S. R.,Smith H. E.,Khlebnikov Igor,Khlebnikov Y. I.,Basceri C.,Balkas C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2227622

Reference15 articles.

1. Semi‐insulating 6H–SiC grown by physical vapor transport

2. Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity

3. High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

4. High temperature Hall effect measurements of semi-insulating 4H–SiC substrates

5. Defects in High-Purity Semi-Insulating SiC

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterizations on the doping of single-crystal silicon carbide;Materials Today Physics;2022-12

2. An experimental study on determination of the shottky diode current-voltage characteristic depending on temperature with artificial neural network;Physica B: Condensed Matter;2021-05

3. Excitation wavelength-dependent carrier dynamics in n-type and semi-insulating 6H-SiC using ultrafast transient absorption spectroscopy;Journal of Applied Physics;2019-06-21

4. Ultrafast Carrier Dynamics in n-Type and Semi-Insulating 6H-SiC Crystals;Laser & Optoelectronics Progress;2019

5. Ultrafast bulk carrier recombination transients in n-type and semi-insulating 4H-SiC crystals;Applied Physics Letters;2018-05-14

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