Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Abstract

To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode, because transient capacitance methods such as deep level transient spectroscopy and isothermal capacitance transient spectroscopy are feasible only in low-resistivity semiconductors. Seven intrinsic defects are detected in the high-purity semi-insulating 4H-SiC. From the temperature dependence of the emission rate of each intrinsic defect, its activation energy is approximately determined.