Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=2/a=021002/pdf
Reference19 articles.
1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
2. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
3. Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
4. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
5. Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 1\bar2 2) Plane Gallium Nitrides
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2. Analytic S-Shaped Temperature Dependence of Peak Positions of the Localized-State Ensemble Luminescence and Application in the Analysis of Luminescence in Non- and Semi-Polar InGaN/GaN Quantum-Wells Micro-Array;Chinese Physics Letters;2022-09-01
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4. Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes;Science China Materials;2021-11-12
5. Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization;ACS Photonics;2021-04-16
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