Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 1\bar2 2) Plane Gallium Nitrides
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=2/a=021002/pdf
Reference26 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
4. Spontaneous polarization and piezoelectric constants of III-V nitrides
5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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2. Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy;Journal of Applied Physics;2015-07-14
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4. Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth;Japanese Journal of Applied Physics;2013-08-01
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