Affiliation:
1. Compound Semiconductor Development Department, Research Division 3, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi-shi 243-0014, Kanagawa, Japan
Abstract
In this paper, we introduce how gallium nitride-based (GaN-based) VCSELs with curved mirrors have evolved. The discussion starts with reviewing the fundamentals of VCSELs and GaN-based materials and then introducing the curved-mirror cavity’s principle and history and the latest research where the structure is applied to GaN-based materials to form VCSELs. We prepared these parts so that readers understand how VCSELs with this cavity work and provide excellent characteristics such as efficiency, life, stabilized mode behavior, etc. Finally, we discussed the challenges and prospects of these devices by touching on their potential applications.
Subject
Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics
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