Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3078818
Reference24 articles.
1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. Dislocation-Freem-Plane InGaN/GaN Light-Emitting Diodes onm-Plane GaN Single Crystals
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