Micro‐Light‐Emitting Diodes Based on InGaN Materials with Quantum Dots-Reference-Cited by-同舟云学术

Micro‐Light‐Emitting Diodes Based on InGaN Materials with Quantum Dots

Published:2021-12-29 Issue: Volume: Page:2101189
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv Materials Technologies

Author:

Liu Zhaojun¹,Hyun Byung‐Ryool¹,Sheng Yujia¹²^ORCID,Lin Chun‐Jung³,Changhu Mengyuan¹,Lin Yonghong¹,Ho Chih‐Hsiang⁴,He Jr‐Hau²^ORCID,Kuo Hao‐Chung³

Affiliation:

1. Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 China

2. Department of Materials Science and Engineering City University of Hong Kong Hong Kong 999077 China

3. Department of Photonics and Institute of Electro‐Optical Engineering College of Electrical and Computer Engineering National Chiao Tung University Hsinchu 30010 Taiwan

4. Raysolution LLC San Jose CA 95129 USA

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202101189

Reference178 articles.

1. When group-III nitrides go infrared: New properties and perspectives

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Nitride Semiconductor Devices

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