High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes-Reference-Cited by-同舟云学术

High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes

Published:2024-05-08 Issue: Volume: Page:
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Deng Chuhan¹^ORCID,Chen Zhizhong¹²³^ORCID,Dong Boyan¹,Pan Zuojian¹,Zhang Haodong¹,Chen Yian¹,Li Yuchen¹,Wang Daqi¹,Hu Ling¹,Chen Weihua¹,Jiao Fei¹⁴,Kang Xiangning¹,Yuan Lin⁵,Zhu Jianfeng⁵,Xia Chenhui⁵,Wang Qi²,Zhang Guoyi¹²,Shen Bo¹³

Affiliation:

1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 China

2. Dongguan Institute of Optoelectronics Peking University Dongguan Guangdong 523808 China

3. Yangtze Delta Institute of Optoelectronics Peking University Nantong Jiangsu 226000 China

4. State Key Laboratory of Nuclear Physics and Technology School of Physics Peking University Beijing 100871 China

5. Nantong Tongfang Semiconductor Co., Ltd Nantong 226001 China

Abstract

Small‐size pixels and high efficiency under low injection levels are required for high‐resolution microdisplay. Efficient blue InGaN micro‐light‐emitting diodes (μLEDs) with 5 μm diameter are fabricated using AuSn flip‐chip bonding, high reflection electrodes, and large‐area N electrodes surrounding the mesas. The peak external quantum efficiency (EQE) measured in an integrating sphere is as high as 13.67% at a current density of 5.4 A cm−2. Moreover, at a current density of 0.1 A cm−2, EQE can still reach 11.69%. The electrical efficiency approaches 1, and the differential slope of log L versus log I is close to 1 at low current density. These results suggest significant progress in exploring high‐efficiency 5 μm InGaN blue μLEDs.

Funder

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202400027

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