Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization

Author:

Shan Maocheng12,Zhang Yi1,Tian Ming3,Lin Rongyu2,Jiang Jie’an4,Zheng Zhihua1,Zhao Yongming1,Lu Yi2,Feng Zhechuan3,Guo Wei4ORCID,Dai Jiangnan1ORCID,Chen Changqing1,Wu Feng1,Li Xiaohang2ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

2. King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955, Saudi Arabia

3. College of Physics Science and Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi University, Nanning 530004, China

4. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201 Zhejiang China

Funder

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Wuhan National Laboratory for Optoelectronics

Chinese Academy of Sciences

KAUST Baseline BAS

GCC Research Council

Competitive Research Grants URF

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

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