Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors-Reference-Cited by-同舟云学术

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Published:2013-11-18 Issue:21 Volume:103 Page:211103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kao Tsung-Ting,Liu Yuh-Shiuan,Mahbub Satter Md.,Li Xiao-Hang,Lochner Zachary,Douglas Yoder P.,Detchprohm Theeradetch,Dupuis Russell D.,Shen Shyh-Chiang,Ryou Jae-Hyun,Fischer Alec M.,Wei Yong,Xie Hongen,Ponce Fernando A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4829477

Reference20 articles.

1. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

2. Deep-Ultraviolet Light-Emitting Diodes

3. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

4. 280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region

5. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

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