Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=3/a=031002/pdf
Reference12 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
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3. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
4. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
5. 250nmAlGaN light-emitting diodes
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