Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes-Reference-Cited by-同舟云学术

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Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes

Published:2021-11-12 Issue:2 Volume:65 Page:543-546
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Tian Aiqin,Hu Lei,Li Xuan,Wu Si,Xu Peng,Wang Dan,Zhou Renlin,Guo Binglei,Li Fangzhi,Zhou Wei,Li Deyao,Ikeda Masao,Yang Hui,Liu Jianping

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-021-1804-x.pdf

Reference29 articles.

1. Ohta H, DenBaars SP, Nakamura S. Future of group-III nitride semiconductor green laser diodes. J Opt Soc Am B, 2010, 27: B45

2. Lingrong J, Jianping L, Aiqin T, et al. GaN-based green laser diodes. J Semicond, 2016, 37: 111001

3. Tian A, Hu L, Zhang L, et al. Design and growth of GaN-based blue and green laser diodes. Sci China Mater, 2020, 63: 1348–1363

4. Risk WP, Gosnell TR, Nurmikko AV. Compact Blue-Green Lasers. Cambridge, New York: Cambridge University Press, 2003.

5. Queren D, Avramescu A, Brüderl G, et al. 500 nm electrically driven InGaN based laser diodes. Appl Phys Lett, 2009, 94: 081119

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