Deposition-Temperature Effect on Nitride Trapping Layer of Silicon–Oxide–Nitride–Oxide–Silicon Memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. On the go with SONOS
2. Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer
3. Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition
4. Use of Neural Network to Characterize a Low Pressure Temperature Effect on Refractive Property of Silicon Nitride Film Deposited by PECVD
5. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved programming/erasing speed of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack;Solid-State Electronics;2012-12
2. Deposition temperature effect of the memory characteristics for Al2O3/Y2O3/SiO2 (AYO) multi-stacked film;Journal of the Ceramic Society of Japan;2012
3. Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals;IEEE Transactions on Electron Devices;2010-08
4. Mobile-Ion-Induced Charge Loss Failure in Silicon–Oxide–Nitride–Oxide–Silicon Two-Bit Storage Flash Memory;Japanese Journal of Applied Physics;2009-06-22
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