Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals-Reference-Cited by-同舟云学术

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Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals

Published:2010-08 Issue:8 Volume:57 Page:1895-1902
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chiang Tsung-Yu,Wu Yi-Hong,Ma William Chen,Kuo Po-Yi,Wang Kuan-Ti,Liao Chia-Chun,Yeh Chi-Ruei,Yang Wen-Luh,Chao Tien-Sheng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5518459/05497125.pdf?arnumber=5497125

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage;Nanomaterials;2022-07-18

2. Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells;Applied Surface Science;2019-02

3. SONOS Memories: Advances in Materials and Devices;MRS Advances;2017-01

4. Materials and Device Reliability in SONOS Memories;Charge-Trapping Non-Volatile Memories;2017

5. Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory;Materials;2015-08-07

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