Mobile-Ion-Induced Charge Loss Failure in Silicon–Oxide–Nitride–Oxide–Silicon Two-Bit Storage Flash Memory-Reference-Cited by-同舟云学术

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Mobile-Ion-Induced Charge Loss Failure in Silicon–Oxide–Nitride–Oxide–Silicon Two-Bit Storage Flash Memory

Published:2009-06-22 Issue:6 Volume:48 Page:066510
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Imaoka Kazunori,Higashi Masahiko,Shiraiwa Hidehiko,Inoue Fumihiko,Kajita Tatsuya,Sugawa Shigetoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. NROM: A novel localized trapping, 2-bit nonvolatile memory cell

2. Impact of floating gate dry etching on erase characteristics in NOR flash memory

3. Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric

4. Endurance and Data Retention Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Semiconductor Memory Devices with Partially Bottom-Silicon-Rich Nitride Structure

5. Deposition-Temperature Effect on Nitride Trapping Layer of Silicon–Oxide–Nitride–Oxide–Silicon Memory

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1. Influence of RPO Film and CESL Material on Data Retention in Non-Volatile Memory;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15

2. Electrolyte Detection by Ion Beam Analysis, in Continuous Glucose Sensors and in Microliters of Blood using a Homogeneous Thin Solid Film of Blood, HemaDrop™;MRS Advances;2016-06

3. An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory;IEICE Transactions on Electronics;2011

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