An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory

Author:

OTAKE Akira1,YAMAGUCHI Keita1,KAMIYA Katsumasa1,SHIGETA Yasuteru2,SHIRAISHI Kenji13

Affiliation:

1. Graduate School of Pure and Applied Sciences, University of Tsukuba

2. Graduate School of Engineering Science, Osaka University

3. Center of Computational Science, University of Tsukuba

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. [1] Y. Park, J. Choi, C. Kang, C. Lee, Y. Shin, B. Choi, J. Kim, S. Jeon, J. Sel, J. Park, K. Choi, T. Yoo, J. Sim, and K. Kim, “Highly manufacturable 32Gb multi-level NAND flash memory with 0.0098µm2 cell size using TANOS (Si-Oxide-Al2O3-TaN) cell technology,” Tech Dig. International Electron Devices Meeting 2006, on San Francisco, CA, USA, Dec. 2006.

2. [2] M. Ishiduki, Y. Fukuzumi, R. Katsumata, M. Kito, M. Kido, H. Tanaka, Y. Komori, Y. Nagata, T. Fujiwara, T. Maeda, Y. Mikajiri, S. Oota, M. Honda, Y. Iwata, R. Kirisawa, H. Aochi, and A. Nitayama, “Optimal device structure for pipe-shaped BiCS flash memory for ultra high density storage device with excellent performance and reliability,” Tech Dig. International Electron Devices Meeting 2009, pp.625-628, Baltimore, MD, USA, Dec. 2009.

3. [3] R. Ohba, Y. Mitani, N. Sugiyama, and S. Fujita, “10nm Bulk-Planar SONOS-type memory with double tunnel junction and sub-10nm scaling utilizing source to drain direct tunnel sub-threshold,” Tech Dig. International Electron Devices Meeting 2008, pp.839-842, San Francisco, CA, USA, Dec. 2008.

4. [4] A. Shappir, E. Lusky, G. Cohen, I. Bloom, M. Janai, and B. Eitan, “The two-bit NROM reliability,” IEEE T. Device Mat. Re., vol.4, pp.397-403, Sept. 2004.

5. [5] K. Imaoka, M. Higashi, H. Shiraiwa, F. Inoue, T. Kajita, and S. Sugawa, “Mobile-ion-induced charge loss failure in silicon-oxide-nitride-oxide-silicon two-bit storage flash memory,” Jpn. J. Appl. Phys., vol.48, pp.66510-66515, June 2009.

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