Characterization of oxygen impurity in silicon nitride storage layer: A first-principles investigation-Reference-Cited by-同舟云学术

Characterization of oxygen impurity in silicon nitride storage layer: A first-principles investigation

Published:2014-04-06 Issue:6 Volume:251 Page:1212-1218
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Luo Jing¹,Lu Jinlong¹,Zhao Hongpeng¹,Dai Yuehua¹,Liu Qi²,Yang Jin¹,Jiang Xianwei¹,Xu Huifang¹

Affiliation:

1. School of Electronics and Information Engineering; Anhui University; Hefei 230601 P. R. China

2. Laboratory of Nano-Fabrication and Novel Device Integrated Technology; Institute of Microelectronics, Chinese Academy of Sciences; Beijing 100029 P. R. China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. Density functional theory study of deep traps in silicon nitride memories

5. Capturing properties of a threefold coordinated silicon atom in silicon nitride: Positive correlation energy model

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