First-principles study of electron trapping by intrinsic surface states on β-Si3N4 (0001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference39 articles.
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3. Explanation of the charge trapping properties of silicon nitride storage layers for NVMs-part II: Atomistic and electrical modeling;Vianello;IEEE Trans. Electron Dev.,2011
4. Electronic structures of ß-Si3N4(0001)/Si(111) interfaces: Perfect bonding and dangling bond effects;Yang;J. Appl. Phys.,2009
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