Ab Initio Study of Transition Levels for Intrinsic Defects in Silicon Nitride-Reference-Cited by-同舟云学术

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Ab Initio Study of Transition Levels for Intrinsic Defects in Silicon Nitride

Published:2010-12-21 Issue:2 Volume:115 Page:561-569
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Di Valentin Cristiana¹,Palma Giorgio¹,Pacchioni Gianfranco¹

Affiliation:

1. Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 53, I-20125 Milan, Italy

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp106756f

Reference40 articles.

1. Memory technology in the future

2. Electronic band structure and effective masses of electrons and holes in the α and β phases of silicon nitride

3. Gap states in silicon nitride

4. Electronic structure of silicon nitride

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