New insight on the charge trapping mechanisms of SiN-based memory by atomistic simulations and electrical modeling-Reference-Cited by-同舟云学术

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New insight on the charge trapping mechanisms of SiN-based memory by atomistic simulations and electrical modeling

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Vianello E.,Perniola L.,Blaise P.,Molas G.,Colonna J. P.,Driussi F.,Palestri P.,Esseni D.,Selmi L.,Rochat N.,Licitra C.,Lafond D.,Kies R.,Reimbold G.,De Salvo B.,Boulanger F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424414.pdf?arnumber=5424414

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscopic physical origin of charge traps in 3D NAND flash memories;Japanese Journal of Applied Physics;2023-02-14

2. Chickens or Eggs in the Atomic World: Structures and Electronic Properties of Defects in Semiconductors;JPSJ News and Comments;2022-01-15

3. Role of polarity in SiN on Al/GaN and the pathway to stable contacts;Semiconductor Science and Technology;2020-03-25

4. Formation Rules and Dynamics of Photoinduced χ(2) Gratings in Silicon Nitride Waveguides;ACS Photonics;2019-12-09

5. Multiscale simulation of lateral charge loss in Si3N4 3D NAND flash based on density functional theory;Journal of Physics D: Applied Physics;2019-07-24

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