Radiation resistance of nanolayered silicon nitride capacitors-Reference-Cited by-同舟云学术

Radiation resistance of nanolayered silicon nitride capacitors

Published:2020-05 Issue: Volume:471 Page:17-23
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Romanova Marina,Avotina Liga,Andrulevicius Mindaugas^ORCID,Dekhtyar Yuri,Enichek Gennady,Kizane Gunta,Novotný Michal,Pajuste Elina,Pokorný Petr,Yager Tom,Zaslavski Aleksandr

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference55 articles.

1. LPCVD and PECVD silicon nitride for microelectronics technology;Joshi;Indian J. Eng. Mater. Sci.,2000

2. Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs;Muthuseenu;Microelectron. Reliab.,2020

3. Heavy ion irradiation effects on capacitors with SiO2 and ONO as dielectrics;Gasperin;IEEE Trans. Nucl. Sci.,2009

4. Effect of space radiation on the leakage current of MEMS insulators;Patton;IEEE Trans. Nucl. Sci.,2013

5. Electron and ion beam effects in amorphous SiO2 and Si3N4 films for electronic devices;Hezel;Radiation Effects,1982

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