Evaluation of electron traps in SiNx by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SB/a=SBBK02/pdf
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5. Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells
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