Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=6S3/a=06KB04/pdf
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1. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
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3. Nanoscale observation of subgap excitations in β-Si3N4 with a high refractive index using low-voltage monochromated STEM: a new approach to analyze the physical properties of defects in dielectric materials;Applied Physics Express;2022-06-09
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