Effect of alloying temperature on the capacitance-voltage and current-voltage characteristics of low-pressure chemical vapor deposition SiNx/n-GaN MIS structures-Reference-Cited by-同舟云学术

Effect of alloying temperature on the capacitance-voltage and current-voltage characteristics of low-pressure chemical vapor deposition SiNx/n-GaN MIS structures

Published:2015-09-09 Issue:12 Volume:212 Page:2928-2935
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ma Xiaohua¹,Liu Ying¹,Wang Xinhua²,Huang Sen²,Gao Zhu¹,Bao Qilong²,Liu Xinyu²

Affiliation:

1. School of Advanced Materials and Nanotechnology; Xidian University; Xi'an 710071 P.R. China

2. Key Laboratory of Microelectronics Device and Integrated Technology; Institute of Microelectronics of Chinese Academy of Sciences; Beijing 100029 P.R. China

Funder

Program for New Century Excellent Talents in University

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs

2. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric

3. Robust SiN_x/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN_x Layer

4. LPCVD against PECVD for micromechanical applications

5. Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

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