Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures-Reference-Cited by-同舟云学术

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Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Published:2021-03 Issue: Volume:542 Page:148530
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Deng Kexin,Wang Xinhua,Huang Sen,Yin Haibo,Fan Jie,Shi Wen,Guo Fuqiang,Wei Ke,Zheng Yingkui,Shi Jingyuan,Jiang Haojie,Wang Wenwu,Liu Xinyu

Funder

Chinese Academy of Sciences

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference42 articles.

1. GaN-on-Si power technology: Devices and applications;Chen;IEEE Trans. Electron Devices,2017

2. A survey of gallium nitride HEMT for RF and high power applications;Fletcher;Superlattices Microstruct.,2017

3. GaN-based metal-insulator-semiconductor high-electron-mobility transistors using low-pressure chemical vapor deposition sin_x as gate dielectric;Hua;IEEE Electron Device Lett.,2015

4. Robust SiNx/AlGaN interface in GaN HEMTs passivated by thick LPCVD-grown SiNx layer;Wang;IEEE Electron Device Lett.,2015

5. Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer;Zhang;IEEE Trans. Electron Devices,2016

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering;Applied Physics Reviews;2024-05-31

2. Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers*;Semiconductor Science and Technology;2024-03-25

3. Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors;Journal of Applied Physics;2024-02-22

4. In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication;Micromachines;2023-06-21

5. Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiN_x Passivation;IEEE Transactions on Electron Devices;2022-12

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