Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer-Reference-Cited by-同舟云学术

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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer

Published:2016-02 Issue:2 Volume:63 Page:731-738
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Zhili,Yu Guohao,Zhang Xiaodong,Deng Xuguang,Li Shuiming,Fan Yaming,Sun Shichuang,Song Liang,Tan Shuxin,Wu Dongdong,Li Weiyi,Huang Wei,Fu Kai,Cai Yong,Sun Qian,Zhang Baoshun

Funder

Key Technologies Support Program of Jiangsu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7387799/07370783.pdf?arnumber=7370783

Cited by 97 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress of GaN-based E-mode HEMTs;Journal of Physics D: Applied Physics;2024-07-23

2. Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric;Applied Physics Letters;2024-07-22

3. Strain‐Engineered Unified SiN_x Deposition for Device Passivation and Capacitance Dielectric in GaN Monolithic Microwave Integrated Circuit;physica status solidi (a);2024-07-03

4. Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation;Results in Physics;2024-05

5. Analysis of Abnormal C–V Hump on Si₃N₄ MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress;IEEE Transactions on Electron Devices;2024-04

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