Analysis of Abnormal C–V Hump on Si3N4 MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress-Reference-Cited by-同舟云学术

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Analysis of Abnormal C–V Hump on Si₃N₄ MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress

Published:2024-04 Issue:4 Volume:71 Page:2349-2354
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Ya-Huan¹,Chang Kai-Chun¹,Lin Hsin-Ni¹,Tai Mao-Chou²^ORCID,Huang Wei-Chen¹,Lin Jia-Hong¹,Kuo Hung-Ming¹^ORCID,Lee Jason³,Huang I-Yu⁴,Chang Ting-Chang⁵^ORCID

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Department of Computer Science, Boston University, Boston, MA, USA

4. College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung, Taiwan

5. Department of Physics, the Center of Crystal Research, and College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10436332.pdf?arnumber=10436332

Reference23 articles.

1. Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

2. Review of GaN HEMT Applications in Power Converters over 500 W

3. AlGaN/GaN HEMTs-an overview of device operation and applications

4. GaN power electronics for automotive application

5. Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer

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