AlGaN/GaN HEMTs-an overview of device operation and applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/5/21982/01021567.pdf?arnumber=1021567
Cited by 1484 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A comprehensive simulation study on dual segment AlGaN/GaN HEMT for mercury ion detection: Addressing steric hindrance and interfering ions;Materials Science and Engineering: B;2024-03
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3. Device Optimization of T-shaped Gate and Polarized Doped Buffer-Engineered InAlN/GaN HEMT for Improved RF/Microwave Performance;Arabian Journal for Science and Engineering;2024-02-05
4. Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side;Electronics;2024-02-04
5. High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer;ACS Applied Electronic Materials;2024-02-02
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