Device Optimization of T-shaped Gate and Polarized Doped Buffer-Engineered InAlN/GaN HEMT for Improved RF/Microwave Performance
Author:
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s13369-024-08705-3.pdf
Reference40 articles.
1. Rajawat, V.S.; Kumar, A.; Choudhary, B.: Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide. Mem. Mater. Devices Circuits Syst. 65(3), 860–866 (2018). https://doi.org/10.1109/TED.2018.2793853
2. Rao, M.V.G.; Ramanjaneyulu, N.; Pydi, B.; Soma, U.; Babu, K.R.; Prasad, S.H.: Enhancing performance of dual-gate FinFET with high-K gate dielectric materials in 5 nm technology: a simulation study. Trans. Electr. Electron. Mater. (2023). https://doi.org/10.1007/s42341-023-00473-5
3. Maurya, R.K.; Bhowmick, B.: Review of FinFET devices and perspective on circuit design challenges. SILICON 14, 5783–5791 (2022). https://doi.org/10.1007/s12633-021-01366-z
4. Kumar, A.; Tripathi, M.M.; Chaujar, R.: Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications. Superlattices Microstruct. 116, 171–180 (2018). https://doi.org/10.1016/j.spmi.2018.02.018
5. Kumar, A.: Effect of trench depth and gate length shrinking assessment on the analog and linearity performance of TGRC-MOSFET. Superlattices Microstruct. 109, 626–640 (2017). https://doi.org/10.1016/j.spmi.2017.05.045
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Novel Dielectric Modulated Double Gate Charge-Trapping MOSFET: Ferroelectric Gate Stack and Gaussian Doped Substrate Integration for Enhanced Performance;2024 IEEE International Conference on Information Technology, Electronics and Intelligent Communication Systems (ICITEICS);2024-06-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3