Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin-Reference-Cited by-同舟云学术

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Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin

Published:2017-12-19 Issue:2S2 Volume:57 Page:02CB06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ochi Mototaka,Hino Aya,Goto Hiroshi,Hayashi Kazushi,Fujii Mami N.,Uraoka Yukiharu,Kugimiya Toshihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=2S2/a=02CB06/pdf

Reference42 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Trap densities in amorphous-InGaZnO4 thin-film transistors

3. Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

4. Factors controlling electron transport properties in transparent amorphous oxide semiconductors

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1. Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films;Japanese Journal of Applied Physics;2024-04-01

2. Abnormal threshold voltage shift by the effect of H2O during negative bias stress in amorphous InGaZnO thin film transistors;Solid-State Electronics;2020-12

3. Sub-gap defect states in back-channel-etched amorphous In-Ga-Zn-O TFTs studied by photoinduced transient spectroscopy;2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2019-11

4. Investigation on the gate insulator thickness dependence of ZnO–SnO2 thin film transistors;Japanese Journal of Applied Physics;2019-02-11

5. Electrical Characterization of Zinc-Rich Amorphous In-Ga-Zn-O Thin Film Transistors;physica status solidi (a);2018-08-07

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