Author:
Ha Tae-Kyoung,Kim Yongjo,Yu SangHee,Kim GwangTae,Jeong Hoon,Park JeongKi,Kim Ohyun
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004
2. Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display;Kwon;IEEE Electron Device Lett,2008
3. Ha T-K, Kim Y-J, Cho Y-J, Kang Y-S, Yu SH, Kim GT, Jeong H, Park JK, Kim O. Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors. Solid-state Electron 2020;165:107752.
4. Kim Y-J, Ha T-K, Cho Y-J, Kang Y-J, Yu SH, Kim GT, Jeong H, Park JK, Kim O. Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress. Solid-state Electron 2020;167:107785.
5. Dong C, Xu J, Zhou Y, Zhang Y. Xie. Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience. 2019;153:74.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献