Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors

Published:2020-03 Issue: Volume:165 Page:107752
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ha Tae-Kyoung,Kim Yongjo,Cho Yong-Jung,Kang Yun-Seong,Yu SangHee,Kim GwangTae,Jeong Hoon,Park Jeong Ki,Kim Ohyun

Funder

Ministry of Science, ICT and Future Planning (MSIP), Korea

Institute for Information & communications Technology Promotion

LG display

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display;Kwon;IEEE Electron Device Lett,2008

3. Effect of illumination on the hump phenomenon in I-V characteristics of amorphous InGaZnO TFTs under positive gate-bias stress;Cho;Phys Status Solidi A,2017

4. Relationship between detrapping of electrons and negative gate bias during recovery process in a-InGaZnO thin film transistors;Kang;Phys Status Solidi A,2019

5. Instabilities in amorphous oxide semiconductor thin-film transistors;Conley;IEEE Trans Device Mater Reliab,2010

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs;IEEE Electron Device Letters;2024-08

2. High‐performance MEMS shutter display with metal‐oxide thin‐film transistors and optimized MEMS element;Journal of the Society for Information Display;2023-08-14

3. Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility;ACS Applied Materials & Interfaces;2023-07-25

4. Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination;Micromachines;2023-04-13

5. Turn-around of threshold voltage shift in amorphous InGaZnO TFT under positive bias illumination stress;Solid-State Electronics;2023-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3