Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
2. Samsung Electronics, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Korea
Funder
Samsung
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c06517
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