Effect of illumination on the hump phenomenon in I -V characteristics of amorphous InGaZnO TFTs under positive gate-bias stress-Reference-Cited by-同舟云学术

Effect of illumination on the hump phenomenon in I -V characteristics of amorphous InGaZnO TFTs under positive gate-bias stress

Published:2017-01-04 Issue:5 Volume:214 Page:1600503
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Cho Yong-Jung¹,Lee Yeol-Hyeong¹,Kim Woo-Sic¹,Kim Byeong-Koo²,Park Kyung Tae²,Kim Ohyun¹

Affiliation:

1. Department of Electrical Engineering; Pohang University of Science and Technology; Pohang 37673 Republic of Korea

2. IT/Mobile Development Group; LG Display; Gumi 39394 Republic of Korea

Funder

LG Display

LG Display for the technical support

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

4. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

5. Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths

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1. Investigation of Hump Behavior of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor Under Positive Bias Stress;IEEE Transactions on Electron Devices;2022-02

2. Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress;Solid-State Electronics;2020-05

3. Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors;Solid-State Electronics;2020-03

4. Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor;Scientific Reports;2019-08-19

5. Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film Transistors;physica status solidi (a);2019-01-07