Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-48552-z.pdf
Reference28 articles.
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5. Nomura, K., Kamiya, T., Hirano, M. & Hosono, H. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors. Appl. Phys. Lett. 95, 013502, https://doi.org/10.1063/1.3159831 (2009).
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