Circular Architecture for Excellent Uniformity in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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Circular Architecture for Excellent Uniformity in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

Published:2024-09 Issue:9 Volume:71 Page:5421-5424
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Yanqin¹,Li Xufan¹,Zhang Jianwei²,Yang Zhenzhong²,Wang Jiawei¹^ORCID,Wang Lingfei¹^ORCID,Li Mengmeng¹^ORCID,Li Ling¹^ORCID,Liu Ming¹^ORCID

Affiliation:

1. Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Department of Electronics, Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10623600.pdf?arnumber=10623600

Reference28 articles.

1. Metal oxide semiconductor thin-film transistors for flexible electronics

2. Transparent, High-Performance Thin-Film Transistors with an InGaZnO/Aligned-SnO2-Nanowire Composite and their Application in Photodetectors

3. Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

4. Highly transparent, ultra‐thin flexible, full‐color mini‐LED display with indium–gallium–zinc oxide thin‐film transistor substrate

5. 23‐4: Full Color, Active‐Matrix Micro‐LED Display with Dual Gate a‐IGZO TFT Backplane

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