Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/7/077307/pdf
Reference20 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Low-voltage gallium–indium–zinc–oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application
3. Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer
4. Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering
5. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation
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1. Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors;Coatings;2022-10-13
2. Bias stability of solution-processed In2O3 thin film transistors;Journal of Physics: Materials;2020-11-17
3. Improving Charge Trapping/Detrapping Characteristics of Amorphous In–Ga–ZnO Thin-Film-Transistors Using Microwave Irradiation;Journal of Nanoscience and Nanotechnology;2019-10-01
4. Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide;Physical Review Applied;2018-05-25
5. Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs;Chinese Physics Letters;2018-02
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